Source: Infineon Technologies AGA power MOSFET designed according to the superjunction (SJ) principle offers outstanding efficiency gains of up to 4 percent and a decrease in device temperature of up to 16 percent when compared to the competition, which addresses current trends in flyback topologies.

The 700V CoolMOS™ P7 SJ MOSFET family from Infineon Technologies was developed with a low gate threshold voltage of 3.0 volts and a narrow tolerance of just ±0.5 volts. The design is highly efficient with lower switching losses and excellent thermal behavior. High ESD ruggedness up to HBM class 2 levels is also achieved due to the integrated Zener diode.

The cost-competitive technology is designed to support smaller form factors and high-power density designs.