Bourns, Inc., a supplier of electronic components for power, protection and sensing solutions, has introduced its first 650 V to 1,200 V silicon carbide (SiC) Schottky barrier diodes (SBDs). This SiC SBD line consists of six models engineered to provide excellent current carrying and thermal capabilities and high power density for increased performance and reliability. Applications envisioned for these high efficiency power conversion solutions include telecom/server switched-mode power supplies, photovoltaic inverters, PC power and motor drives.

To address ongoing design demands for ever higher power efficiency, the Bourns SiC SBDs feature low forward voltage and high thermal conductivity, which increases efficiency while lowering power dissipation,Source: Bourns, Inc. satisfying application requirements of 650 V and 1,200 V solutions. The series also has no reverse recovery current to reduce electromagnetic interference, enabling these SiC SBDs to significantly lower energy losses. In addition to offering 650 V to 1,200 V operation with currents in the 6 A to 10 A range, the six new models of wide band gap diodes offer designers various forward voltage, current and package options including TO220-2, TO247-3, TO252 and DFN8x8.

The six Bourns Model SiC SBDs are available now. and are RoHS compliant, halogen free, lead free and their epoxy potting compound is flame retardant to the UL 94V-0 standard.